Method of manufacturing an isolation region in a semiconductor d

Details Method of manufacturing an isolation region in a semiconductor d Method of manufacturing an isolation region in a semiconductor d

1997-09-15

2000-09-05

Tsai, Jey

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438436, 438438, 438692, 438698, H01L 2176

Patent

active

061142190

ABSTRACT:
A method for the manufacture of a semiconductor device with trench isolation regions includes forming at least one trench in a substrate to define one or more isolation regions. At least a portion of the trench is filled with a flowable oxide-generating material which is then formed into an oxide layer. An optional dielectric layer can be deposited over the oxide layer. A portion of the oxide layer and/or the optional dielectric layer is removed to generate a substantially planer surface.

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