Optical waveguides – Planar optical waveguide – Thin film optical waveguide
Patent
1996-03-21
1998-06-09
Palmer, Phan T. H.
Optical waveguides
Planar optical waveguide
Thin film optical waveguide
385 1, 385 8, 385123, 385129, 430 5, 430311, 257 18, 257 94, G02B 610
Patent
active
057648425
ABSTRACT:
After a shadow mask that is separate from a semiconductor substrate is used and is arranged over the semiconductor substrate via a wafer holder installed in a reaction chamber of a vapor-phase epitaxial system so that a predetermined space d can be secured, a semiconductor thin film crystal including a core layer and a cladding layer is grown by organometallic vapor-phase epitaxy. A core layer wherein the thickness of a grown film in an area which is opposite to a masking part of the shadow mask on the semiconductor substrate is reduced in the tapered shape can be readily obtained by introducing this process for growth in a normal process for fabricating a semiconductor guided-wave optical device. A semiconductor guided-wave optical device and a method of fabricating thereof wherein the thickness of a film which is to be a waveguide is tapered and the width of the waveguide is tapered without deteriorating crystallinity by a new crystal growing method using this shadow mask are obtained. It is desirable that the surface of the shadow mask be coated with a dielectric cap layer. Hereby, a beam expander-integrated laser diode which can be fabricated by an extremely simple method and enables extremely efficient optical coupling with a fiber can be realized.
REFERENCES:
patent: 5598501 (1997-01-01), Maruo et al.
patent: 5608566 (1997-03-01), Dutta et al.
H. Kobayashi et al, "Tapered Thickness MQW Waveguide BH MQW Lasers", Institute of Electronics, Information and Communication Engineers, Spring Conference, 1995, pp. 463-464. No month.
G. Coudenys et al, "Atmospheric and Low Pressure Shadow Masked MOVPE Growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs Heterostructures and Quantum Wells", Journal of Electronic Materials, vol. 23, No. 2, 1994, pp. 225-232. No month.
S.M. Bedair et al, "New Laterally Selective Growth Technique By Metalorganic Chemical Vapor Deposition", Applied Physics Letters, vol. 48, No. 1, Jan. 6, 1986, pp. 30-32.
H. Kobayashi et al, "Narrow Beam Tapered Thickness Waveguide Integrated BH MQW Laser Operation at High Temperatures", IEEE International Semiconductor Laser Conference, Technical Digest 14, Sep. 1994, pp. 191-192.
G. Vermeire et al, "Monolithic Integration of a Single Quantum Well Laser Diode and a Mode-Size Convertor Using Shadow-Masked Metalorganic Vapour Phase Epitaxial Growth", Journal of Crystal Growth 145, 1994, pp. 875-880.
Aoki Masahiro
Komori Masaaki
Sato Hiroshi
Suzuki Makoto
Hitachi , Ltd.
Palmer Phan T. H.
LandOfFree
Semiconductor guided-wave optical device and method of fabricati does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor guided-wave optical device and method of fabricati, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor guided-wave optical device and method of fabricati will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2211543