Patterning process including simultaneous deposition and ion mil

Details Patterning process including simultaneous deposition and ion mil Patterning process including simultaneous deposition and ion mil

1992-09-28

1995-01-03

Fourson, George

Fishing, trapping, and vermin destroying

427 78, 437984, H01L 2131

Patent

active

053786580

ABSTRACT:
A process for forming a pattern on a substrate which includes depositing a film-forming material from above a mask formed on the substrate and forming a film on the mask and in regions of the substrate not covered by the mask, wherein the film formation is carried out while irradiating an ion beam towards the mask so that the deposition on the side surface portion of a deposition material being deposited on the mask is inhibited by ion milling. An electronic device such as a micro field emission cathode or a multi-layer circuit structure is effectively formed using the process.

REFERENCES:
patent: 3921022 (1975-11-01), Levine
patent: 4253221 (1981-03-01), Cochran, Jr. et al.
patent: 4513308 (1985-04-01), Greene et al.
patent: 4874493 (1989-10-01), Pan
Ghandhi, S., VLSI Fabrication Principles, John Wiley & Sons, 1983, p. 527.
K. Betsui, "Fabrication and Characteristics of Si Field Emitter Arrays", Technical Digest of IVMC 91, Nagahama 1991, pp. 26-29.
Patent Abstracts of Japan, vol. 12, No. 9 (E-572) Jan. 12, 1988 & JP-A-62 171143 (Sumitomo Electric Ind. Ltd.) Jul. 28, 1987.

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