Method of making a silicon carbide junction field effect transis

Details Method of making a silicon carbide junction field effect transis Method of making a silicon carbide junction field effect transis

1993-04-19

1995-01-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437100, 437911, H01L 21266

Patent

active

053786424

ABSTRACT:
A silicon carbide (SiC) junction field effect transistor (JFET) device is fabricated upon a substrate layer, such as a p type conductivity SiC substrate, using ion implantation for the source and drain areas. A SiC p type conductivity layer is epitaxially grown on the substrate. A SiC n type conductivity layer is formed by ion implantation or epitaxial deposition upon the p type layer. The contacting surfaces of the p and n type layers form a junction. A p+ type gate area supported by the n type layer is formed either by the process of ion implantation or the process of depositing and patterning a second p type layer. The source and drain areas are heavily doped to n+ type conductivity by implanting donor ions in the n type layer.

REFERENCES:
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 4897710 (1990-01-01), Suzuki et al.
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5264713 (1993-11-01), Palmour
Ghandhi, S. K., "VLSI Fabrication Principles, Silicon and Gallium Arsenide", pp. 420-424, 1983.
"Nitrogen-Implanted SiC Diodes Using High-Temperature Implantation" by Mario Ghezzo, et al, IEEE Electron Device letters, vol. 13, No. 12, Dec. 1992.
"Epitaxial Deposition of Silicon Carbide from Silicon Tetrachloride and Hexane" by W. V. Muench, et al, Thin Solid Films, 31 (1976), pp. 39-51.

Affiliated with

Also associated with

Rating

Method of making a silicon carbide junction field effect transis does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a silicon carbide junction field effect transis, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a silicon carbide junction field effect transis will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2211156