Silicon thin film member

Stock material or miscellaneous articles – Composite – Of quartz or glass

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428336, 428446, 428448, 428450, 428688, 428698, 428699, 428704, B32B 1706

Patent

active

053785410

ABSTRACT:
A silicon thin film member according to the present invention comprises a supporting substrate and an a-Si thin film formed by plasma CVD and including hydrogen. The a-Si thin film has a distribution of hydrogen density in which a hydrogen content of the a-Si thin film has a maximum value of 1.times.10.sup.22 atoms/cm.sup.3 or more in a position 20 nm or less away from an interface between the a-Si thin film and the supporting substrate, and the maximum value of the hydrogen content is larger than a hydrogen content of the supporting substrate on the interface. The hydrogen content of the a-Si thin film decreases from the position toward the interface and decreases from the position in a direction from the supporting substrate to the a-Si thin film.

REFERENCES:
patent: 4237150 (1980-12-01), Wiesmann
patent: 4237151 (1980-12-01), Strongin
patent: 4587171 (1986-05-01), Hamano
patent: 4749588 (1988-06-01), Fukuda
Madan, Arun and Shaw, Melvin P., "The Physics and Applications of Amorphous Semiconductors", Academic Press, Inc., San Diego, Calif., (1988), pp. 134-141.
Joannopoulos, J. D. and Lucovsky, "The Physics of Hydrogenated Amorphous Silicon I, Structure, Preparation, and Devices", Springer-Verlag, New York, (1984), pp.200-201.
Pankove, Jacques I., "Semiconductors and Seminetals", Academic Press, Inc., New York, (1984), pp. 1 & 9.
Carlson, D. E. and Magee, C. W., "A SIMS Analysis of Deuterium Diffusion in Hydrogenated Amorphous Silicon", RCA Laboratories, Princeton, N.J. (Apr. 18, 1989), pp. 81-83.
Westerberg, L., Svensson L. E., Karlsson, E., "Stable Absolute Calibration Standards for Hydrogen Profile Analysis Using Nuclear Resonance Techniques", Nuclear Physics and Nuclear Solid State Physics Divisions, Department of Physics, University of Uppsala, Uppsala, Sweden, (1985), pp. 49-54.
Carlson, D. E., Mageen, C. W., and Triano, A. R., "The Effect of Hydrogen Content on the Photovoltaic Properties of Amorphous Silicon", Journal of Electrochem Society, Apr. (1979), pp. 688-691.

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