Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1999-01-21
2000-06-06
Utech, Benjamin L.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117204, 117211, 117212, 117222, 117223, 117914, C30B 3500, C30B 1506
Patent
active
060713399
ABSTRACT:
A crystal plate 1 is grown in a continuous process by first purifying a crystal source material, a crystal melt or powder, in a purification station 3. Valves 7 control the flow of purified crystal melt or source powder 9 to a first hot zone 11, whose temperature is above the melt temperature of the crystal. A dopant source 17 with controller 19 provides dopant to the liquefied crystal 15. The first heater zone 21 surrounding the first hot zone 11 heats the crystal above its melting temperature. The second heater zone 27 produces a temperature in the second zone which is below the melt temperature of the crystal. The liquefied crystal, the liquid solid interface and the first portion of the crystal are supported in a boat-shaped crucible container with a bottom 31 and side walls. As the crystal leaves the support plate 31 it passes on to a conveyor 33. The crystal moves within an enclosure 43, which has a noble gas or noble gas and reactant gas atmosphere 45. A large heater has a first zone 37 which heats the initial part of the crystal apparatus to a temperature below the melt temperature, and a second zone 39 which maintains the crystal at a lower temperature. A purified and doped crystal emerges from the enclosure.
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Champagne Donald L.
Creighton Wray James
Narasimhan Meera P.
Optoscint, Inc.
Utech Benjamin L.
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