Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-03-31

1998-06-09

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319

Patent

active

057646724

ABSTRACT:
A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current I.sub.th (A), a threshold voltage V.sub.th (V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance R.sub.S (.OMEGA.) of the diode after the rising, a thermal resistance R.sub.t (K/W) and a characteristic temperature T.sub.0 (K). When two amounts .alpha. and .beta. are defined by:

REFERENCES:
patent: 4691321 (1987-09-01), Motegi et al.
patent: 5363395 (1994-11-01), Gaines et al.
patent: 5389800 (1995-02-01), Itaya et al.
Electronics Letters, Aug. 5, 1993, vol. 29, No. 16, "Room Temperature Continuous Operation of Blue-Green Laser Diodes", Nakayama et al.
IEEE Transactions on Electron Devices, vol. 40, No. 11, Nov. 1993, "Blue-Green Buried-Ridge Laser Diodes", M.A. Haase et al.

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