Coherent light generators – Particular active media – Semiconductor
Patent
1996-01-11
1998-06-09
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 46, 372 49, H01S 319
Patent
active
057646694
ABSTRACT:
A method for fabricating a semiconductor laser device includes successively epitaxially growing a quantum-well structure active layer and a second conductivity type Al.sub.r Ga.sub.1-r As first upper cladding layer on a first conductivity type GaAs substrate, forming an SiO.sub.2 film on a region in a vicinity of the laser resonator facet on the second conductivity type first cladding layer, annealing, thereby absorbing Ga from the second conductivity type first upper cladding layer to form and diffuse vacancies to reach the quantum-well structure active layer, thereby disordering the quantum-well structure active layer in a region in the vicinity of the laser resonator facet. Therefore, it is possible to form a window structure by disordering the quantum-well structure active layer without generating crystal transitions. In addition, there is no necessity of implanting Si ions so as to diffuse those ions to form a window structure, and there arises no unlikelihood of disordering that because the Si ions are trapped during their diffusion by crystal defects formed by the ion implantation, whereby a semiconductor laser device provided with a desired window structure can be produced with high reproducibility.
REFERENCES:
patent: 4827483 (1989-05-01), Fukuzawa et al.
patent: 4875216 (1989-10-01), Thornton et al.
patent: 5020068 (1991-05-01), Isshiki
patent: 5376582 (1994-12-01), Behfar-Rad et al.
patent: 5469457 (1995-11-01), Nagai et al.
patent: 5577063 (1996-11-01), Nagai et al.
Itaya et al., "New Window-Structure InGaAlP Visisble Light Laser Diodes By Self-Selective Zn Diffusion-Induced Disordering", IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun. 1991, pp. 1496-1500.
Deppe et al., "Stripe-Geometry Quantum Well Heterostructure Al.sub.x Ga.sub.1-x As-GaAs Lasers Defined By Defect Diffusion", Applied Physics Letters, vol. 49, No. 9, Sep. 1986, pp. 510-512.
Ralston et al., "Room-Temperature Exciton Transactions In Partially Intermixed GaAs/AlGaAs Superlattices", Applied Physics Letters, vol. 52, No. 19, May 1988, pp. 1511-1513.
Bovernick Rodney B.
Mitsubishi Denki & Kabushiki Kaisha
Phan Luong-Quyen T.
LandOfFree
Semiconductor laser including disordered window regions does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser including disordered window regions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser including disordered window regions will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2210153