Semiconductor device and electrode block for the same

Details Semiconductor device and electrode block for the same Semiconductor device and electrode block for the same

1990-12-04

1993-02-23

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

257727, 257730, 257719, H01L 2302, H01L 2304

Patent

active

051895099

ABSTRACT:
A flat-pack type GTO thyristor (100) has an external cathode electrode (30) placed on a semiconductor element (1). The top surface of the external cathode electrode has a three-level step configuration (33a, 33b, 33c). When a cathode member (51) of an external electric equipment is pushed onto the external cathode electrode, no force is applied to the lower two steps (33b, 33c) in the step configuration. Consequently, the peripheral portion of the external cathode electrode is not deformed and the semiconductor element does not become unstable in gate characteristics.

REFERENCES:
patent: 3457472 (1969-07-01), Mulski
patent: 3512249 (1970-05-01), Lewis
patent: 4426659 (1984-01-01), de Bruyn et al.
patent: 4500907 (1985-02-01), Takigami et al.

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