Semiconductor device having ventilative insulating films

Details Semiconductor device having ventilative insulating films Semiconductor device having ventilative insulating films

1991-05-07

1993-02-23

Wojciechowicz, Edward J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257760, H01L 2934

Patent

active

051895021

ABSTRACT:
A semiconductor device including a first wiring layer, and insulator layer formed on the first wiring layer and including a first silicon oxide film, a spin-coated insulating film formed on the first silicon oxide film and a second silicon oxide film formed on the spin-coated insulating film, a through-hole selectively formed in the insulator layer to expose a part of the first wiring layer, and a second wiring layer formed on the insulator layer and in contact with the part of the first wiring layer exposed through the through-hole, wherein the second silicon oxide film has a density lower than the density of the first silicon oxide film and allows gas from the spin-coated insulating film to go through the second silicon oxide film.

REFERENCES:
patent: 4984055 (1991-01-01), Okumura et al.
"Interlevel Dielectric Planarization With Spin-On Glass Films", L. B. Vines and S. K. Gupta, Jun. 9-10, 1986 V-MIC Conf., IEEEE.

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