Planar double-layer heterojunction HgCdTe photodiodes and method

Details Planar double-layer heterojunction HgCdTe photodiodes and method Planar double-layer heterojunction HgCdTe photodiodes and method

1988-08-29

1993-02-23

Buczinski, Stephen C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

25037013, 2505781, 437 3, 437 14, 437 16, 437 19, 257441, H01J 4014, H01L 2714, H01L 3118

Patent

active

051892979

ABSTRACT:
A double layer heterojunction array 10 of IR photodiodes has formed within an upper planar surface region of a collector layer 16 a plurality of isolation junctions 20 which are disposed between individual photodiodes. The isolation junctions are formed by a thermally driven process of type-converting the p-type or n-type collector layer to the opposite type of material. This type conversion forms p-n homojunctions at the edges of the isolation junctions which isolate the individual photodiodes one from another. The type-conversion process of the invention provides two isotype junctions which together reflect excess minority charge carriers away from the surface of the device as well as from neighboring photodiodes. One method of the invention discloses the selective annealing of the surface of an n-type collector layer to extract mercury atoms thereby creating mercury vacancies which act as acceptors. Other methods disclose the type conversion as being accomplished by the selective diffusion of a dopant layer into the collector layer.

REFERENCES:
patent: 4105478 (1978-08-01), Johnson
patent: 4206003 (1980-06-01), Koehler
patent: 4318758 (1982-03-01), Tien
patent: 4338139 (1982-07-01), Shinada
C. C. Wang et al., Proc. IRIS Detector, 1986, vol. II.
A journal article entitled, "Development of HgCdTe LWIR Heterojunction Mosaics", Proc. IRIS Detector, 1986, vol. II, Wang et al., pp. 255, 256.

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