Method for the epitaxial manufacture of a semiconductor device h

Details Method for the epitaxial manufacture of a semiconductor device h Method for the epitaxial manufacture of a semiconductor device h

1979-09-04

1981-06-23

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 29576E, H01L 21208

Patent

active

042748909

ABSTRACT:
A method is provided of manufacturing, on a substrate of a binary compound, layers of ternary or quaternary compounds in which epitaxial intermediate layers separate the substrate from the end layer, wherein the relative increase of the dimensions of the crystal lattices in the successive epitaxial intermediate layers increases.

REFERENCES:
patent: 3958263 (1976-05-01), Panish et al.
patent: 3962716 (1976-06-01), Petroff et al.
patent: 3982261 (1976-09-01), Antypas
patent: 3995303 (1976-11-01), Nahory et al.
patent: 4072544 (1978-02-01), DeWinter et al.

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