Multilevel interconnect structure with air gaps formed between m

Details Multilevel interconnect structure with air gaps formed between m Multilevel interconnect structure with air gaps formed between m

1996-04-12

1997-09-16

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257508, 257632, 257773, H01L 2940

Patent

active

056683987

ABSTRACT:
A semiconductor device with air gaps 22 between metal leads 16, comprising metal leads 16 formed on a substrate 12, air gaps 22 between metal leads 16, a 10-50% porous dielectric layer 20 on the metal leads 16 and over the air gaps 22, and a non-porous dielectric layer 24 on the porous dielectric layer 20. Optional features include a patterned oxide 28 over the metal leads 16 and a passivation layer 26 over the metal leads 16 and patterned oxide 28. The porous dielectric layer 20 may comprise an aerogel or xerogel.

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