Solid state imager with reduced smear and method of making the s

Details Solid state imager with reduced smear and method of making the s Solid state imager with reduced smear and method of making the s

1994-05-17

1997-03-25

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257222, 257250, 257435, H01L 27148, H01L 29768

Patent

active

056147414

ABSTRACT:
A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is not formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).

REFERENCES:
patent: 5250825 (1993-10-01), Negishi et al.
patent: 5343060 (1994-08-01), Abe
Patent Abstracts of Japan, vol. 17, No. 535, 27 Sep. 1993.
Patent Abstracts of Japan, vol. 16, No. 564, 4 Dec. 1992.

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