Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-04-09
1997-09-16
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257221, 257224, 257233, 257243, H01L 27148, H01L 29768
Patent
active
056683901
ABSTRACT:
The solid-state image sensor disclosed has a photodiode including a P-type layer provided on a surface of a semi-conductor substrate, an N-type layer provided in the N-type layer, and a P.sup.+ -type region which is disposed on a surface of the N-type layer. A P.sup.++ -type region is disposed in a region surrounding the photodiode excepting in a read region for reading out charges in the photodiode, and this P.sup.++ -type region has a higher impurity concentration and a greater depth than the P.sup.+ -type region. That is, the P.sup.++ -type region which isolates photodiode regions and vertical CCD regions from one another is formed as a high impurity concentration diffusion layer or an electron trap region containing a large amount of electron trap centers. Thus, it is possible to reduce smear generation in unit pixels and to produce sharp images.
REFERENCES:
patent: 4851890 (1989-07-01), Miyataki
patent: 5424775 (1995-06-01), Kamisaka et al.
patent: 5432363 (1995-07-01), Kamisaka et al.
patent: 5585653 (1996-12-01), Nakashiba
NEC Corporation
Ngo Ngan V.
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