Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
2000-02-01
2000-12-12
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257350, H01L 2904, H01L 3120, H01L 31036, H01L 310376
Patent
active
06160271&
ABSTRACT:
To provide a semiconductor device having a function equivalent to that of IGFET, an activation layer is formed by a crystal silicon film crystallized by using a catalyst element helping promote crystallization and a heating treatment is carried out in an atmosphere including a halogen element by which the catalyst element is removed, the activation layer processed by such steps is constituted by a peculiar crystal structure and according to the crystal structure, a rate of incommensurate bonds in respect of all of bonds at grain boundaries is 5% or less (preferably, 3% or less).
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Ohtani Hisashi
Yamazaki Shunpei
Ngo Ngan V.
Semiconductor Energy Laboratory Co,. Ltd.
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