Manufacturing method of non-volatile semiconductor memory device

Details Manufacturing method of non-volatile semiconductor memory device Manufacturing method of non-volatile semiconductor memory device

1991-07-09

1993-02-23

Thomas, Tom

Chemistry: molecular biology and microbiology

Micro-organism, tissue cell culture or enzyme using process...

Preparing compound containing a...

437 43, 437 48, 437195, 437228, H01L 2170

Patent

active

051889765

ABSTRACT:
Before a high permittivity interlayer insulating film of a non-volatile memory having a two-level gate electrode structure, a surface of a substrate in a peripheral circuit MOS area is successively covered with a thermal oxide film and a polycrystalline silicon film. Before the interlayer insulating film is selectively removed on the peripheral circuit MOS area, the surface of the interlayer insulating film of the non-volatile memory is covered with a polycrystalline silicon film. When the interlayer insulating film in the peripheral circuit MOS area is removed, the polycrystalline silicon film as a lower layer in the peripheral circuit area serves as a buffer layer against contamination or damage due to the etching, and the conductive layer on the surface of the interlayer insulating film in the non-volatile memory portion also serves as a buffer layer against the contamination or damage due to the etching.

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