Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1991-08-19

1993-02-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 4, 437 41, 437 51, 437205, 148DIG105, H01L 21265

Patent

active

051889749

ABSTRACT:
A method of manufacturing a semiconductor device having a photoconductive semiconductor layer formed on a substrate and a pair of electrodes formed on the semiconductor layer with an ohmic contact layer interposed therebetween, wherein the ohmic contact layer is removed after the etching process of the semiconductor layer.

REFERENCES:
patent: 4405915 (1983-09-01), Komatsu et al.
patent: 4545111 (1985-10-01), Johnson
patent: 4581099 (1986-08-01), Fukaya et al.
patent: 4857751 (1989-08-01), Hatanaka et al.
patent: 4931661 (1990-06-01), Fukaya et al.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2204390