Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1997-02-20
2000-12-12
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 39, H01L 2906
Patent
active
061602663
ABSTRACT:
This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part between.
REFERENCES:
patent: 5196395 (1993-03-01), James et al.
patent: 5358928 (1994-10-01), Ginley et al.
patent: 5422497 (1995-06-01), Saitoh et al.
patent: 5510324 (1996-04-01), Nakamura et al.
patent: 5512151 (1996-04-01), Hayamizy et al.
patent: 5552374 (1996-09-01), Tanaka et al.
patent: 5612290 (1997-03-01), Tanaka et al.
patent: 5627139 (1997-05-01), Chin et al.
Adachi Hideaki
Odagawa Akihiro
Setsune Kentaro
Chaudhuri Olik
Matsushita Electric - Industrial Co., Ltd.
Wille Douglas A.
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