Semiconductor apparatus including a tin barrier layer having a (

Details Semiconductor apparatus including a tin barrier layer having a ( Semiconductor apparatus including a tin barrier layer having a (

1995-09-21

1998-06-09

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257764, 257767, 257915, H01L 2348, H01L 2352, H01L 2940, H01L 2912

Patent

active

057639485

ABSTRACT:
A semiconductor apparatus having at least a compound film containing nitrogen and a method for production of the same, wherein the compound film containing nitrogen is formed under conditions where the ratio of the flow rates of the nitrogen with respect to an inert gas is 0.125 to 1.0.

REFERENCES:
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5449954 (1995-09-01), Ito
patent: 5514908 (1996-05-01), Liao et al.
patent: 5580823 (1996-12-01), Hedge et al.
patent: 5581125 (1996-12-01), Maeda
patent: 5627102 (1997-05-01), Shinriki et al.

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