Integrated electronic device with reduced parasitic currents, an

Details Integrated electronic device with reduced parasitic currents, an Integrated electronic device with reduced parasitic currents, an

1996-12-24

1998-06-09

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257500, H01L 2900, H01L 2976

Patent

active

057639345

ABSTRACT:
The present invention relates to an electronic device integrated monolithlly on a semiconductor material comprising a substrate having a first conductivity type in which are formed first and second diffusion regions of a second conductivity type. The substrate and the first and second diffusion regions defining a base region, a collector region and an emitter region of a parasitic transistor. The second diffusion region includes a third diffusion region having conductivity of the first type to provide in the second diffusion region a resistive path placed in series with the emitter region of the parasitic transistor while backfeeding it negatively and taking it to saturation with a resulting reduction of its current gain and limitation of the maximum current due thereto.

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