Fishing – trapping – and vermin destroying
Patent
1995-11-03
1997-03-25
Nguyen, Tuan H.
Fishing, trapping, and vermin destroying
437126, 437133, 437 93, 437228, H01L 21265
Patent
active
056144237
ABSTRACT:
A self-aligned heterojunction bipolar transistor is disclosed which includes a semiconductor substrate having the (100) plane as a main surface, and at least a collector region, a base region, and an emitter region having a bandgap greater than the base region. The emitter region has an under-cut mesa structure and its crystal orientation is defined in a direction other than that parallel to the [011] direction. In neither the [001] direction nor the [01 1] direction has the transistor any outwardly slanted structure that could cause leakage current between the emitter and base and, hence, the transistor has improved electric isolation between the emitter and base although it is self-aligned.
REFERENCES:
patent: 5063427 (1991-11-01), Chandrasekhar et al.
patent: 5206524 (1993-04-01), Chen et al.
patent: 5345097 (1994-09-01), Nakagawa
patent: 5389554 (1995-02-01), Liu et al.
patent: 5468659 (1995-11-01), Hafizi et al.
IEICE Trans. Electron, Sep. 1993, vol. E76-C, No. 9, pp. 1392-1401, "IC-Oriented Self-Aligned High-Performance AIGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs", Yataka Murata et al.
IEEE, May 1995, pp. 643-647, "Novel Self-Aligned Sub-micron Emitter InP/InGaAs HBT's Using T-Shaped Emitter Electrode", Hiroshi Masuda et al.
IEEE, 1995, pp. 163-166, "Over-220-Ghz-f.sub.t -and-f.sub.max InP/InGaAS Double-Heterojunction Bipolar Transistors with a New Hexagonal-Shaped Emitter", Shoji Yamahata et al.
Matsuoka Yutaka
Yamahata Shoji
Nguyen Tuan H.
Nippon Telegraph and Telephone Corporation
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