Method for making a closed gate MOS transistor with self-aligned

Details Method for making a closed gate MOS transistor with self-aligned Method for making a closed gate MOS transistor with self-aligned

1979-07-05

1981-06-23

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, 357 23, H01L 2126

Patent

active

042741939

ABSTRACT:
A method of manufacturing a closed gate MOS transistor having a self-aligned drain contact is presented which insures that the drain contact will have the minimum required geometry. The method employs a self-aligned procedure which insures that the drain contact will have the minimum dimensions to insure a high speed device.

REFERENCES:
patent: 3472712 (1969-10-01), Bower
patent: 3513364 (1970-05-01), Heiman
patent: 3608189 (1971-09-01), Gray
patent: 3745647 (1973-07-01), Boleky
patent: 4016016 (1977-04-01), Ipri
patent: 4063274 (1977-12-01), Dingwall
patent: 4081896 (1978-04-01), Dingwall
patent: 4149307 (1979-04-01), Henderson
patent: 4149904 (1979-04-01), Jones
patent: 4219379 (1980-08-01), Athanas

Affiliated with

Also associated with

Rating

Method for making a closed gate MOS transistor with self-aligned does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a closed gate MOS transistor with self-aligned, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a closed gate MOS transistor with self-aligned will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2200782