Patent
1980-07-25
1982-04-27
Clawson, Jr., Joseph E.
357 30, 357 51, 357 55, 357 86, H01L 2974
Patent
active
043273670
ABSTRACT:
A thyristor having an emitter on the top surface of a semiconductor body and also having metalized areas on the top surface forming electrodes is provided with an alignment region extending beneath the edge of the gate electrode. The alignment region is formed in the thyristor base zone and is of the same conductivity type as the thyristor emitter. Precise spacing between the alignment region and the emitter is readily achieved because both are formed in a single masking step. Slight misalignment of the gate metalization on the top surface is corrected for because the alignment region precisely defines the line closest to the emitter at which the gate electrode contacts the base. The turn-on potential at the emitter-based junction is therefore uniform along its entire length.
REFERENCES:
patent: 3611066 (1971-10-01), Knaus
patent: 3624464 (1971-11-01), Gentry
W. Dodson et al., "Probed Det. of T-O Speed of Large Area Thys" IEEE Trans, on Elec. Dev., vol. Ed-13 #5, May 1965, pp. 478-484.
A. Munoz-Yague et al., "Opt. Design of Thyris. Gate-Emitter Geom.," IEEE Trans. on Elec. Dev., vol. Ed-23 #8, Aug. 1976, pp. 917-924.
S. Sze, "Physcis of Semiconductor Devices," .COPYRGT.1969, John Wiley and Sons, Wiley Interscience, pp. 119-126.
Clawson Jr. Joseph E.
Electric Power Research Institute Inc.
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