Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-10-16
1996-08-06
Clawson, Jr., Joseph E.
Static information storage and retrieval
Floating gate
Particular biasing
36518502, 36518506, 36518522, G11C 1604
Patent
active
055440991
ABSTRACT:
A floating gate type field effect transistor increases the threshold during an application of a write-in pulse to the control gate electrode thereof so as to inject hot electrons into the floating gate electrode, and the write-in pulse is decayed along a waveform having a gradient smaller than a gradient of a pulse signal assumed to take place in a source/drain region of a non-selected floating gate type field effect transistor sharing the selected word line with the selected floating gate type field effect transistor, thereby preventing the non-selected floating gate type field effect transistor from the gate disturb phenomenon.
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Clawson Jr. Joseph E.
NEC Corporation
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