Method of writing data into electrically erasable and programmab

Static information storage and retrieval – Floating gate – Particular biasing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36518502, 36518506, 36518522, G11C 1604

Patent

active

055440991

ABSTRACT:
A floating gate type field effect transistor increases the threshold during an application of a write-in pulse to the control gate electrode thereof so as to inject hot electrons into the floating gate electrode, and the write-in pulse is decayed along a waveform having a gradient smaller than a gradient of a pulse signal assumed to take place in a source/drain region of a non-selected floating gate type field effect transistor sharing the selected word line with the selected floating gate type field effect transistor, thereby preventing the non-selected floating gate type field effect transistor from the gate disturb phenomenon.

REFERENCES:
patent: 4200841 (1980-04-01), Nagata et al.
patent: 4434478 (1984-02-01), Cook et al.
patent: 4460982 (1984-07-01), Gee et al.
patent: 4520461 (1985-05-01), Simko
patent: 4611309 (1986-09-01), Chuang et al.
patent: 4617652 (1986-10-01), Simko
patent: 4860258 (1989-08-01), Fruhauf et al.
patent: 4966571 (1991-02-01), Kume et al.
patent: 5068827 (1991-11-01), Yamada et al.
patent: 5257225 (1993-10-01), Lee
patent: 5258949 (1993-11-01), Chang et al.
patent: 5487033 (1996-01-01), Keeney et al.
"Golden age of Flash-Type Leading Part of Floppy Substitute"; Nikkei Micro-devices, Mar. 1990, pp. 72-76.
N. Kodama et al.; "A 5V only 16 Mbit Flash EEPROM Cell Using Highly Reliable Write/Erase Technologies"; NEC Corporation, pp. 75-76.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of writing data into electrically erasable and programmab does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of writing data into electrically erasable and programmab, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of writing data into electrically erasable and programmab will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2196909

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.