Single-bit output type memory including bipolar selection transi

Details Single-bit output type memory including bipolar selection transi Single-bit output type memory including bipolar selection transi

1993-07-21

1994-12-06

Dixon, Joseph L.

Static information storage and retrieval

Floating gate

Particular biasing

365177, 36518909, 36518911, 365207, 365208, 3652256, 36523003, 36523006, 365210, G11C 700, G11C 11413, G11C 11419

Patent

active

053717031

ABSTRACT:
Bipolar transistors are used to select memory cells of single-bit line output type. Bit lines are connected to the emitters of the selecting bipolar transistors, respectively. The collectors of the selecting bipolar transistors are connected to one another, thus forming a node. A potential which is higher than the ground potential and lower than a power-supply potential is applied to the gate of any one of the bipolar transistors which has been selected. This potential determines the maximum voltage of the bit lines. A current-sensing amplifier amplifies the difference between a reference potential and the potential of the collector node of the bipolar transistors, thus generating two output signals. A sense amplifier converts these output signals into a signal at a CMOS logic level, whereby the data stored in a selected memory cell is read out. The selected bit line is charged with a current flowing from the current-sensing amplifier circuit through the collector-emitter path and base-emitter path of the selecting bipolar transistor.

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Jacob Millman, Ph.D, "Microelectronics-Digital and Analog Circuits and Systems," pp. 155-159, 186-187.

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