Electro absorption optical modulators

Details Electro absorption optical modulators Electro absorption optical modulators

1994-09-09

1996-06-25

Epps, Georgia Y.

Optical: systems and elements

Optical modulator

Light wave temporal modulation

G02F 103

Patent

active

055305806

ABSTRACT:
The saturation effects observed in an MQW electro-absorption modulator are reduced by modifying the composition of the MQW structure so that the barrier layers, that are interleaved with the quantum well layers, are in tension.

REFERENCES:
patent: 5012304 (1991-04-01), Kash et al.
Takasaki et al., "Observation of separate electron and hole escape rates in unbiased strained InGaAsP multiple quantum well laser structures", Applied Physics Letters, vol. 62, No. 20, May 17, 1993, pp. 2525-2527.

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