Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-07-28
1982-04-27
Massie, Jerome W.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 29580, 148 15, 156647, 156648, 156657, 1566591, 156662, 357 55, H01L 21265, H01L 21308
Patent
active
043263321
ABSTRACT:
A method for providing high density dynamic memory cells which provides self-alignment of both V-MOSFET device elements and their interconnections through the use of a device-defining masking layer having a plurality of parallel thick and thin regions. Holes are etched in portions of the thin regions with the use of an etch mask defining a plurality of parallel regions aligned perpendicular to the regions in the masking layer. V-MOSFET devices having self-aligned gate electrodes are formed in the holes and device interconnecting lines are formed under the remaining portions of the thin regions. A combination of anisotropic etching and directionally dependent etching, such as reaction ion etching, may be used to extend the depth of V-grooves. A method of eliminating the overhang of a masking layer after anisotropic etching includes the oxidation of the V-groove followed by etching to remove both the grown oxide and the overhang is also disclosed.
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Presented Internat'l Electron Devices Meeting, Wash. D. C. (12/1976) pp. 593-596.
International Business Machines Corp.
Massie Jerome W.
Walter Howard J.
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