Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-07-03
1982-04-27
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29591, H01L 2128
Patent
active
043263305
ABSTRACT:
A process allowing the position and the dimensions of the grid of a field-effect transistor as well as the gaps between source and grid, grid and drain to be fixed as early as the first masking operation. To this end, a mask is formed comprising source, grid and drain windows by using a first insulating or semi-insulating material then the three windows are filled by means of a second material. The ohmic source and drain contacts are deposited in the corresponding windows reopened by selective etching of the second material effected after masking the first part of the layer situated above the non-reopened window. Second selective etching after masking of the contacts allows a Schottky-type grid contact to be deposited.
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Derewonko Henri
Laviron Michel
Lepage Joel
"Thomson-CSF"
Ozaki G.
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