Solid-state imaging device having a reduced image lag

Details Solid-state imaging device having a reduced image lag Solid-state imaging device having a reduced image lag

1981-08-31

1984-11-20

Munson, Gene M.

357 30, 357 89, H01L 2978, H01L 2714, H01L 3100

Patent

active

044842104

ABSTRACT:
A solid-state imaging device has a semiconductor substrate of one conductive type. A plurality of light-charge converter regions, of the opposite conductivity type, are formed in the semiconductor substrate. A charge-voltage converter region, formed in the semiconductor substrate, converts the electric charge produced by the light-charge converter regions into a voltage. At least one charge transfer section is formed in the semiconductor substrate for transferring the electric charge produced by the light-charge converter regions to the charge-voltage converter region. At least one charge transfer gate section is in the semiconductor substrate and has a gate electrode for controlling the timing of a transfer of the electric charges from the light-charge converter regions to the charge transfer section. Pulses are generated with a predetermined pulse potential and applied to the gate electrode in the charge transfer gate section. The predetermined pulse potential has the relationship

REFERENCES:
patent: 3995302 (1976-11-01), Amelio
patent: 4155094 (1979-05-01), Ohba et al.
patent: 4385307 (1983-05-01), Suzuki

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