SOS Mosfet with thinned channel contact region

Details SOS Mosfet with thinned channel contact region SOS Mosfet with thinned channel contact region

1981-10-20

1984-11-20

James, Andrew J.

357 42, H01L 2978, H01L 2702

Patent

active

044842090

ABSTRACT:
A MOS type semiconductor device formed on an insulating layer and having a substrate electrode. A first semiconductor layer for forming a MOS type element is formed on the insulating layer and has a substrate region where a channel is to be formed. To this substrate region is connected a second semiconductor layer which is thinner than the first semiconductor layer and which has the same conductivity type as that of the substrate region where the channel is to be formed.

REFERENCES:
patent: 4106045 (1978-08-01), Nishi
patent: 4395726 (1983-07-01), Maeguchi
"Sapphire Brings Out the Best in C-MOS," S. Eaton, Electronics, 6-12-75, pp. 115-118.
"Process Refinements Bring C-MOS on Sapphire Into Commercial Use," A. Capell et al., Electronics, 5-26-77, pp. 99-105.

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