Patent
1983-07-26
1984-11-20
Edlow, Martin H.
357 22, 357 59, 357 23, H01L 29161
Patent
active
044842074
ABSTRACT:
A hetero-junction static induction transistor (SIT) of normal or upside-down type to be operated by applying a forward bias across the gate and source regions, in which at least its source region and gate region among the source, drain and gate regions is formed with a material having a band gap broader than that of the channel region. Such a SIT provides a large current amplification factor, improved frequency characteristics and is suitable for high power operation and for use in semiconductor integrated circuits.
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Nishizawa Jun-ichi
Ohmi Tadahiro
Takeda Nobuo
Edlow Martin H.
Mintel William A.
Zaidan Hojin Handotai Kenkyu Shinkokai
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