Static induction transistor and semiconductor integrated circuit

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357 22, 357 59, 357 23, H01L 29161

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active

044842074

ABSTRACT:
A hetero-junction static induction transistor (SIT) of normal or upside-down type to be operated by applying a forward bias across the gate and source regions, in which at least its source region and gate region among the source, drain and gate regions is formed with a material having a band gap broader than that of the channel region. Such a SIT provides a large current amplification factor, improved frequency characteristics and is suitable for high power operation and for use in semiconductor integrated circuits.

REFERENCES:
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patent: 4173764 (1979-11-01), de Cremoux
patent: 4254429 (1981-03-01), Yamazaki
patent: 4302763 (1981-11-01), Oh-uchi et al.
patent: 4320410 (1982-03-01), Nishizawa et al.
Nishizawa et al., "Bipolar Mode Static Induction Transistor", Jap. J. Appl. Phys., vol. 19, Suppl. 19-1, pp. 289-293, (1980).
Ross et al., "Heterojunction Transistors with Enhanced Gain", Electronic Engineering, vol. 49, No. 589, pp. 35-38, Mar. 1977.
Iwasaki et al., "A Depleted Base Transistor", Jap. J. of Appl. Phys., vol. 17, Supp. 17-1, pp. 245-251, (1978).
Matsushita et al., "A Silicon Heterojunction Transistor", Appl. Phys. Lett., vol. 35, No. 7, pp. 549-550, Oct. 1979.
Oh-uchi et al., "A New Silicon Heterojunction Transistor Using Doped Sipos", IEDM Tech. Dig., (1979), pp. 522-525.

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