Method of forming a titanium silicide film involved in a semicon

Details Method of forming a titanium silicide film involved in a semicon Method of forming a titanium silicide film involved in a semicon

1994-12-22

1996-08-06

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437200, 437240, H01C 2144

Patent

active

055433596

ABSTRACT:
A method of forming a silicate glass film including phosphorus on a titanium silicide film is provided wherein a silicate glass film including phosphorus is formed on a titanium silicide film and thereafter the silicate glass film is subjected to a heat treatment at a temperature in the range from 650.degree. C. to 950.degree. C. for a time in the range from 20 to 70 seconds to cause a fineness reaction of the silicate glass film and suppress a cohesion reaction of the titanium silicide film.

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