Method of impurity doping into semiconductor

Details Method of impurity doping into semiconductor Method of impurity doping into semiconductor

1994-11-09

1996-08-06

Fourson, George

Fishing, trapping, and vermin destroying

437165, 437166, 437173, 437935, 437950, 437962, 437984, H01L 21223

Patent

active

055433561

ABSTRACT:
A method of impurity doping into a semiconductor, which comprises irradiating energy rays such as excimer laser beam (or UV-rays) to a predetermined region of a hydrogen terminated silicon surface to remove hydrogen atom layers terminating the silicon surface thereby forming a patterned silicon surface region not terminated with hydrogen and selectively adsorbing impurities on the silicon surface region not terminated with hydrogen, to conduct impurity doping. When such an impurity doping method is adopted, junctions having shallow and abrupt distribution for use in a miniaturized MOSFET or the like can be attained with a lesser number of the steps. Since the impurity doping process can be constituted as a clean and all dry in-situ process without using photoresist at all, it can also provide advantageous effect in view of enhanced yield and shortened production period.

REFERENCES:
patent: 3364085 (1968-01-01), Dahlberg
patent: 4263066 (1981-04-01), Kolmann
patent: 4465529 (1984-08-01), Arima et al.
patent: 5024968 (1991-06-01), Engelsberg
patent: 5338697 (1994-08-01), Aoki et al.
patent: 5352330 (1994-10-01), Wallace
patent: 5366926 (1994-11-01), Mei et al.
S. Wolf "Silicon Processing For the VLSI Era, vol. 1", Lattice Press 1986, p. 265.
S. Wolf, "Silicon Processing For the VLSI Era, vol. 2", Lattice Press 1990, p. 372.
Tsubouchi et al, "Selective CVD on hydrogen-terminated Si surface", IEDM, Technical Digest, pp. 269-272, 1991.
Ono et al, "Sub 50nm Gate Length N-Mosfets with 10 nm Phosphorous Source. and Drain Junctions", IEDM, Technical Digest, pp. 119-122, 1993.

Affiliated with

Also associated with

Rating

Method of impurity doping into semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of impurity doping into semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of impurity doping into semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2190929