Method of fabricating a quantum dot structure on a (n11) substra

Details Method of fabricating a quantum dot structure on a (n11) substra Method of fabricating a quantum dot structure on a (n11) substra

1994-11-30

1996-08-06

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437126, 437132, 437133, H01L 2120

Patent

active

055433545

ABSTRACT:
A semiconductor structure includes a first semiconductor barrier layer formed on a compound semiconductor substrate, a semiconductor carrier confinement layer formed on the semiconductor barrier layer, and a second semiconductor barrier layer arranged on the semiconductor carrier confinement layer. The semiconductor carrier confinement layer includes a plurality of islands spaced apart from each other and having an almost equal thickness, and a thin quantum well film arranged between the islands and having a thickness smaller than the thickness of the islands.

REFERENCES:
patent: 4122407 (1978-10-01), Vechten
patent: 5079774 (1992-01-01), Mendez et al.
patent: 5363395 (1994-11-01), Gaines et al.
M. Tanaka, H. Sakaki, J. Yoshino and T. Furuta, "Photoluminescence and Absorption Linewidth of Extremely Flat GaAs-AIAs Quantum Wells Prepared by Molecular Beam Epitaxy Including Interrupted Deposition for Automatic Layer Smoothing", Surface Science 174(1986), North-Holland, Amsterdam, pp. 65 and 69.

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