Method of making programmable read-only memory

Details Method of making programmable read-only memory Method of making programmable read-only memory

1994-10-05

1996-08-06

Thomas, Tom

Fishing, trapping, and vermin destroying

437 48, 437 60, H01L 218246

Patent

active

055433448

ABSTRACT:
A programmable read-only memory (PROM) and a method of fabrication are described. A plurality of bit-lines of a first conductivity type are formed in a semiconductor substrate and are spaced apart along a first direction. A dielectric layer is disposed on the semiconductor substrate, wherein the dielectric layer has a plurality of vias at predetermined positions above the bit-lines. A plurality of word-lines of a second conductivity type are disposed on the dielectric layer and spaced apart along a second direction substantially orthogonal to the first direction. A control layer is disposed within the vias and sandwiched between the bit-lines and the word-lines, wherein each crossing region of the bit-lines and the word-lines with the control layer disposed there between define a memory cell of the programmable read-only memory. When programming the PROM, selected memory cells of the programmable read-only memory are set in an ON state by applying a programming voltage higher than the normal reading voltage on the word-lines of the selected memory cells while grounding the bit-lines of the selected memory cells to break down the corresponding control layers, whereby the remaining memory cells of the PROM are allowed to remain in an OFF state.

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Gaensslen "Schottky Barrier Read-Only Memory" IBM TDB Jun. 1971 pp. 252-53.
S. A. Abbas "Electronically Encodable Read Only Store" IBM TDB Nov. 70 pp. 1426-1427.

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