Process for forming an electrically programmable read-only memor

Details Process for forming an electrically programmable read-only memor Process for forming an electrically programmable read-only memor

1994-08-29

1996-08-06

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437191, 437927, H01L 218247

Patent

active

055433391

ABSTRACT:
A floating gate (51) is formed to have a cavity (52) that increases the capacitive coupling between the floating gate (51) and a control gate for the memory cell. The memory cell may be used in EPROM, EEPROM, and flash EEPROM arrays and may be programmed and erased by hot carrier injection, Fowler-Nordheim tunneling or the like. The process sequence for forming the cavity (52) of the floating gate (51) has good process margin allowing some lithographic misalignment. In one embodiment, a multi-tiered floating gate may be formed. The multi-tier structure allows the capacitive coupling to further increase without occupying more area.

REFERENCES:
patent: 4700457 (1987-10-01), Matsukawa
patent: 5077225 (1991-12-01), Lee
patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5155657 (1992-10-01), Oehrlein et al.
patent: 5158905 (1992-10-01), Ahn
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5231041 (1993-07-01), Arima et al.
patent: 5262662 (1993-11-01), Gonzalez et al.
patent: 5395779 (1995-03-01), Hong
patent: 5399516 (1995-03-01), Bergendahl et al.
Taguchi, et al.; "A 40-ns 64-Mb DRAM with 64-b Parallel Data Bus Architecture;" IEEE Jour. of Solid-State Circuits; vol. 26, No. 11, pp. 1493-1497 (Nov. 1991).
Itabashi, et al.; "A Split Wordline Cell For 16Mb SRAM Using Polysilicon Sidewall Contacts;" IEDM; pp. 477-480 (1991).
Kume, et al.; "A 1.28 .mu.m**2 Contactless Memory Cell Technology for a 3-V Only 64 Mbit EEPROM;" IEDM; pp. 991-993 (1992).

Affiliated with

Also associated with

Rating

Process for forming an electrically programmable read-only memor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming an electrically programmable read-only memor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming an electrically programmable read-only memor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2190752