Method for manufacturing a semiconductor device using a semicond

Details Method for manufacturing a semiconductor device using a semicond Method for manufacturing a semiconductor device using a semicond

1995-05-15

1996-08-06

Quach, T. N.

Fishing, trapping, and vermin destroying

437 29, 437 45, 437 56, 148DIG150, H01L 21335

Patent

active

055433383

ABSTRACT:
An insulated semiconductor area (10a) and an insulated semiconductor area (10b) are provided in the substrate, and a gate electrode (16a) and a gate electrode (16b) is formed above the insulated semiconductor areas (10a) and (10b), respectively. After masking the semiconductor area (10a), boron atoms are implanted via such a beam that the boron atoms can be injected selectively into only the semiconductor area under the gate electrode (16b) in order to create a channel region (20b). Furthermore, the arsenic atoms are implanted via such a second beam that the arsenic atoms are injected selectively into only the semiconductor area except the semiconductor area under the gate electrode (16b) in order to create a source (22b) and a drain (22b).

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