Process for fabricating capacitor for semiconductor storage devi

Details Process for fabricating capacitor for semiconductor storage devi Process for fabricating capacitor for semiconductor storage devi

1992-07-09

1993-09-28

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437235, 437919, H01L 2170

Patent

active

052486290

ABSTRACT:
A capacitor (12) of a semiconductor storage device, for example, dynamic RAM (11), comprises a storage node (31), a storage capacitance portion (32) formed of tantalum oxynitride film, and a plate (33). The tantalum oxynitride film is produced by a chemical vapor deposition (CVD) process using a reactant gas containing a dialkylaminotantalum. The capacitor exhibits reduced leakage current and enhanced charge storage capacity.

REFERENCES:
patent: 4855801 (1989-08-01), Kuesters
patent: 4970564 (1990-11-01), Kimura et al.

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