C-axis perovskite thin films grown on silicon dioxide

Details C-axis perovskite thin films grown on silicon dioxide C-axis perovskite thin films grown on silicon dioxide

1992-12-09

1993-09-28

Ryan, Patrick J.

Stock material or miscellaneous articles

Composite

Of inorganic material

257295, 3613211, 428689, 428210, B32B 900

Patent

active

052485641

ABSTRACT:
A method and resulting structure for growing a crystalline perovskite film (16) on a silicon dioxide layer (12) by means of an intermediate template layer (14) of a c-axis oriented layered perovskite, such as bismuth titanate. The perovskite film can be ferroelectric lead-lanthanum zirconate titanate or conductive cubic metal oxides used as electrodes for the ferroelectric.

REFERENCES:
patent: 5155573 (1992-10-01), Abe
patent: 5155658 (1992-10-01), Inam
patent: 5164808 (1992-11-01), Evans, Jr.
patent: 5168420 (1992-12-01), Ramesh
Grayson, Encyclopedia of Semiconductor Technology, Wiley & Sons 1984 pp. 242-243.
A. F. Wells, "Structural Inorganic Chemistry", 1975, 4th ed., Clarendon, pp. 149-154.

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