Fishing – trapping – and vermin destroying
Patent
1995-06-07
1996-06-25
Thomas, Tom
Fishing, trapping, and vermin destroying
437192, 437954, 148DIG15, 148DIG35, H01L 2128
Patent
active
055299547
ABSTRACT:
A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film and covering at least the upper surface of the second metal film. The protective film is formed by annealing in an atmosphere containing a predetermined element. That is, the metal element of the first metal film is diffused into the second metal film and reacts with the predetermined element in the atmosphere on the surface of the second metal film, thereby forming the protective film. Aggregation of silver is prevented in the presence of the protective film.
REFERENCES:
patent: 4320169 (1982-03-01), Yatabe et al.
patent: 4774204 (1988-09-01), Havemann
patent: 4806818 (1989-02-01), van Esdonk et al.
patent: 5047367 (1991-09-01), Wei et al.
patent: 5057763 (1991-12-01), Spitzer et al.
patent: 5084412 (1993-01-01), Nakashaki
patent: 5277985 (1994-01-01), Li et al.
patent: 5356837 (1994-10-01), Geiss et al.
patent: 5457069 (1995-10-01), Chen et al.
Vou Seefeld et al, IEEE Trans. on Electron Dev., vol. ED-27, #4, 1980.
Cheung, N. W., et al., J. Appl. Phys, 52 (6) 1991, p. 4297.
Hirasaka, M., et al., Solar energy Materials 19 (1989) 199.
Becker, W. H., Dissertation, U. Penn., (Abstract).
Y. Ushiku, et al. "Planarized Silver . . . " in Proc. Symp. VLSI Tech., 1993, pp. 121-122.
T. Iijima, et al. "Analysis of Ti . . . ". Ext. Abst of the 1993 Int'l Conf. on SSDM, pp. 183-185.
K. Hoshino, et al. "TiN-Encapsulized . . . ". Jun. 12-13, 1989 VMIC Conference, pp. 226-232.
J. Wada, et al. "Formulation Of Single . . . " in Proc. of Symp. on Dry Process., 1992, pp. 175-180.
J. Wada, et al. "New Method Of Making . . . " in IEEE. IRPS, 1993, pp. 71-76.
Iijima Tadashi
Nakasa Naomi
Nishiyama Akira
Ono Hisako
Ushiku Yukihiro
Kabushiki Kaisha Toshiba
Radomsky Leon
Thomas Tom
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