Method of manufacturing a vertical MOSFET having a gate electrod

Details Method of manufacturing a vertical MOSFET having a gate electrod Method of manufacturing a vertical MOSFET having a gate electrod

1994-10-05

1996-06-25

Dang, Trung

Fishing, trapping, and vermin destroying

437 41, 437 44, 437 45, 437 27, H01L 21265

Patent

active

055299407

ABSTRACT:
A method of manufacturing a MOSFET having a p-type gate electrode made of polycrystalline silicon formed through a gate insulating film on a surface of a conductive semiconductor substrate. The gate electrode contains an n-type impurity in addition to a boron impurity. Low threshold voltage can be obtained with less fluctuation. Preferably, the n-type impurity is phosphorus and/or arsenic, and the concentration thereof ranges from 5.times.10.sup.18 to 1.times.10.sup.20 cm.sup.-3. A channel, which is formed in the surface of the gate insulating film side of the substrate, preferably has a positive polarity.

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