Photomask manufacturing process and semiconductor integrated cir

Details Photomask manufacturing process and semiconductor integrated cir Photomask manufacturing process and semiconductor integrated cir

1996-06-17

1998-07-28

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, G03F 900

Patent

active

057861129

ABSTRACT:
In order to improve the inspection efficiency of a photomask having a phase shifter pattern, the inspection of the photomask having the phase shifter pattern is divided into three steps, an anomaly extraction step, a first anomaly discrimination step and a second anomaly discrimination step. These inspection steps are performed at different inspection regions. An anomaly extraction station 7 for the anomaly extraction inspects the presence or absence of an anomaly for all the regions of the photomask 1. An anomaly discrimination station 8 for the anomaly discrimination classifies the content of the anomaly. A phase difference measurement station 9 for the anomaly discrimination measures the phase difference error.

REFERENCES:
patent: 5353116 (1994-10-01), Tanigawa et al.
patent: 5481624 (1996-01-01), Kamon

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