Light activated switching by the avalanche effect in semiconduct

Details Light activated switching by the avalanche effect in semiconduct Light activated switching by the avalanche effect in semiconduct

1980-06-17

1982-08-31

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

H01J 4014

Patent

active

043474373

ABSTRACT:
A body of semiconductor material is biased with multi-kilovolt voltage to establish an electric field approaching the dielectric breakdown field for the semiconductor material. Low level optical energy, such as a laser pulse in the nano-joule range produces free carriers in the semiconductor which multiply in the presence of the electric field to produce avalanche conduction through the semiconductor body thereby switching the multi-kilovolt voltage in precise timed (picosecond) relationship with the application of the optical energy and with high switching or turn on sensitivity.

REFERENCES:
patent: 3626188 (1971-12-01), Chilton
patent: 3917943 (1975-11-01), Auston
patent: 4135099 (1979-01-01), Fiedor et al.

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