Bipolar transistor having an emitter electrode formed of polysil

Details Bipolar transistor having an emitter electrode formed of polysil Bipolar transistor having an emitter electrode formed of polysil

1993-04-26

1995-08-15

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257755, 257588, 257751, 257370, H01L 29735, H01L 29417, H01L 2943

Patent

active

054422264

ABSTRACT:
In a semiconductor device, an emitter electrode has a polysilicon layer provided in a first contact hole and on a first insulating film. The polysilicon layer is in contact with an emitter region and is covered with a metal layer. A second contact hole is provided on a part of a second insulating film located on a substantially flat portion of the metal layer. A third contact hole is provided in those portions of the first insulating film and a second insulating layer which are located on a base region.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4966865 (1990-10-01), Welch et al.
patent: 4979010 (1990-12-01), Brighton
patent: 4980738 (1990-12-01), Welch et al.
"High-Speed BiCMOS Technology with a Buried Twin Well Structure," T. Ikeda et al., IEEE Transaction on Electron Devices, vol. Ed.-34, No. 6, Jun. 1987, pp. 1304-1310.

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