Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1994-01-28
1995-08-15
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257510, 257 74, 257374, H01L 2712, H01L 2702
Patent
active
054422221
ABSTRACT:
The present invention provides a semiconductor device by forming an epitaxial layer (22) insulated from a silicon substrate (2), and forming a device in the epitaxial layer (22). On the semiconductor substrate (2), a silicon dioxide layer (4) is formed (FIG. 2 A). Then the silicon dioxide layer (4) is provided with openings (14) (FIG. 2 D). Silicon is made to grow until it protrudes from the openings (14) to thereby form a silicon seed crystal layer (16) (FIG. 2 E). Next, a silicon nitride layer (18) is formed on the surface of the silicon seed crystal layer (16) and thereafter is oxidized. A field oxide layer (20) is thereby bonded at the lower portion of the openings (14), the silicon seed crystal layer (16) being insulated from the silicon substrate (2). Thereafter, epitaxial growth is effected from the silicon seed crystal layer (16). The growth is stopped just before silicon grown layers (22) connect to one another, thus obtaining epitaxially grown layers (22) having regions which are separate from one another. The device is formed in the epitaxially grown layer (22). The silicon grown layer (22) is isolated from the silicon substrate (2) and has the uniform plane bearing, thus allowing no electrostatic capacitance to be caused due to pn junction with the silicon substrate (2) and high-speed operation to be realized. Moreover, the unique plane bearing facilitates control during the manufacturing process.
REFERENCES:
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"Performance of SOIMOSFETs Fabricated in High Quality Laser-Recrystallized SOI", Y. Inoue et al, Preliminary Bulletin for the Fall Academic Lecture 1991, Applied Physics Society, 11a-SF-21, p. 742.
"Lateral Epitaxial Overgrowth of Silicon on SiO.sub.2 " by D. D. Rathman et al, Journal of Electrochemcial Society Solid-State Science and Technology, Oct., 1982, pp. 2303-2306.
"New SOI-Selective Nucleation Epitaxy", by Ryudai Yonehara et al, Preliminary Bulletin for the 48th Fall Academic Lecture 1987, by the Applied Physics Society, 19p-Q-15, p. 583.
Munson Gene M.
Rohm & Co., Ltd.
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