Fine-grain semiconducting ceramic compositions

Details Fine-grain semiconducting ceramic compositions Fine-grain semiconducting ceramic compositions

1980-10-01

1982-08-31

Schofer, Joseph L.

Compositions

Electrically conductive or emissive compositions

Metal compound containing

106 732, 106 733, 106 7331, 106 735, 75206, 75226, 361321, 357 10, 264 61, 501134, 501137, 501138, 501152, 501154, H01B 106

Patent

active

043471676

ABSTRACT:
A semiconducting internal boundary layer ceramic composition having a fine grain structure suitable for use in thin-layer multilayer capacitors is made in one step by firing a mixture comprising a major amount of finely divided strontium titanate, a minor amount of a compound containing either strontium or titanium, or an element functionally equivalent thereto, a minor amount of a semiconductor forming ingredient (dopant), the identity of which depends on whether the mixture is rich in strontium or in titanium, and a minor amount of a counterdopant selected from cuprous oxide or silver oxide. When the mixture is rich in titanium, the chemical doping agent used to produce semiconductivity is an oxide of a trivalent metal selected from bismuth, boron, iron, antimony, lanthanum and the rare earth and transition metals. When the mixture is rich in strontium, the dopant is an oxide of a pentavalent or hexavalent metal selected from tungsten (+6), niobium (+5), tantalum (+5), and molybdenum (+6).

REFERENCES:
patent: 3997479 (1976-12-01), Shimoyo et al.
patent: 4101454 (1978-07-01), Kulwicki et al.
patent: 4143207 (1979-03-01), Itakiray et al.

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