1978-01-13
1980-02-05
Clawson, Jr., Joseph E.
357 38, 357 90, H01L 29167
Patent
active
041875176
ABSTRACT:
A semiconductor thyristor, having a given forward voltage drop, has its turn-off time or the reverse current behavior adjusted in a defined manner and a reduced blocking current. Essentially, the semiconductor element is divided, at its anode end, into zone elements having a high and a low concentration of recombination centers, whereby, at the anode end, zones not oppositely disposed from the emitter receive a lower average concentratin of recombination centers. The invention is most advantageous when applied to power thyristors.
REFERENCES:
patent: 3440113 (1969-04-01), Wolley
patent: 3625781 (1971-12-01), Joshi et al.
Clawson Jr. Joseph E.
Siemens Aktiengesellschaft
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