1977-11-30
1980-02-05
Larkins, William D.
357 3, 357 56, 357 57, 357 61, 357 86, H01L 4700
Patent
active
041875133
ABSTRACT:
A semiconductor device is disclosed which uses the phenomenon of "scattering limited velocity effect" for practical current limiting purposes. A monolithic chip of semiconductor material has a plurality of active spot regions or conduction channels formed by an encompassing inactive region which surrounds and separates each of the channels. The inactive region blocks current flow and performs a heat sinking function, the latter being necessary because of the high power density within the conduction channels at which the "scattering limited velocity effect" is exhibited.
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patent: 3689993 (1972-09-01), Tolar
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patent: 4134122 (1979-01-01), Moutou et al.
Mo et al. ". . . Field Effect Transistor with Field-Dependent Mobility," IEEE Trans. on Electron Devices, Aug. 1970, pp. 577-586.
Autio William A.
Eaton Corporation
Larkins William D.
Rather Hugh R.
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