Method for manufacturing CCD type solid image pickup device usin

Details Method for manufacturing CCD type solid image pickup device usin Method for manufacturing CCD type solid image pickup device usin

1993-08-03

1995-08-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 35, 437 50, H01L 21265, H01L 2170, H01L 2700

Patent

active

054419107

ABSTRACT:
An impurity doped region for a vertical transfer portion is formed by using a first mask pattern layer. An impurity doped region for a horizontal transfer portion is formed by using a second mask pattern layer which is formed by using the first mask pattern layer.

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I. Stanley Wolf and Richard Tauber, Silicon Processing for the VLSI Era 219-220 (1986).
M. F. Tompsett et al, "Charge-Coupled Imaging Device: Experimental Results", IEEE Trans. of Electron Devices, vol. ED-18, No. 11, Nov. 1971, pp. 992-996.
W. F. Kosonocky et al, "Two-Phase Charge-Coupled Devices with Overlapping Polysilicon and Alumium Gates", RCA Review, vol. 34, Mar. 1973, pp. 164-202.

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